发明名称 Color image sensor device and fabrication method thereof
摘要 A Color image sensor device and fabrication method thereof. A passivation layer and a first planarization layer are sequentially formed on a substrate. A plurality of color filter elements are disposed over the first planarization layer corresponding to the sensor pixel array. A second planarization layer and a third planarization layer are sequentially formed over the first planarization layer. The third planarization layer has an opening formed corresponding to a contact pad. A third opening in the first planarization layer and the passivation layer corresponds to the contact pad.
申请公布号 US2005269656(A1) 申请公布日期 2005.12.08
申请号 US20040000935 申请日期 2004.12.02
申请人 POWERCHIP SEMINCONDUCTOR CORP. 发明人 SHIAN-CHING TSAI;SIAN-MIN CHUNG;CHIA-CHIANG WANG;YU-WAN CHEN;SHIH-LAN CHEN;LEE FU Z.
分类号 H01L21/00;H01L21/302;H01L27/146;H01L31/00;H01L31/0216;(IPC1-7):H01L31/00 主分类号 H01L21/00
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