发明名称 |
Magnetoresistance effect element |
摘要 |
The magnetoresistance effect element can be manufactured by a conventional process and is capable of restricting influences of noises or leaked magnetic signals so that magnetic recording density can be highly improved. The magnetoresistance effect element comprises: a magnetoresistance film including a free layer; and shielding sections being respectively provided on the both sides of the free layer in a direction of track width, the shielding sections being soft magnetic films.
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申请公布号 |
US2005270702(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20040973319 |
申请日期 |
2004.10.26 |
申请人 |
FUJITSU LIMITED |
发明人 |
KOMAGAKI KOUJIRO;NOMA KENJI |
分类号 |
G11B5/39;G11B5/127;G11B5/33;H01L43/08;(IPC1-7):G11B5/33 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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