Light emitting semiconductor diode, comprises primary and secondary silicon containing layers of one conductivity, and a third of the opposite conductivity

摘要

Light emitting semiconductor diode comprises primary and secondary silicon containing layers of one conductivity, and a third layer of the opposite conductivity. Light emission occurs at operating potential by band-band recombination of free charge carriers. The second and third semiconductor layers have a dopant concentration which results in an unsymmetric pn junction between the semiconductor layers.