| 摘要 |
A semiconductor device having a highly resistant metal film and a method of producing such a semiconductor device, which includes a metal film formed on an electrode pad, and a protection film formed in an area where he metal film does not exist. The metal film has a greater thickness on its peripheral end portion in contact with the protection film. The semiconductor device can be produced by a semiconductor production method including the steps of activating the surface o the electrode pad with a chelating solution containing glycine and a compound having a metallic element as nuclei, and forming a metal film by electroless metal plating. |
