| 摘要 |
The thermal processing step of thermally processing a variable resistor film in an oxidizing atmosphere is carried out after the film formation step of forming a variable resistor film (PCMO film), and ON radicals are introduced into positions of oxygen deficiency defects in the PCMO film, and thereby, the three-dimensionally coupled network structure having the PCMO perovskite structure is locally broken down so as to increase the resistivity value. |
