| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment device capable of detecting the breakage of a substrate upon irradiating light. SOLUTION: A semiconductor wafer is mounted on a hot plate to effect preliminary heating by the heat treatment device, and thereafter, flash heating is effected by irradiating a flash from a flash lamp. The temperature of the hot plate is measured at this time. When the flash heating treatment is carried out normally, heat energy given to the semiconductor wafer by the flash heating is transmitted to the hot plate and a slight temperature rise can be recognized in the hot plate. On the other hand, when the semiconductor wafer is broken by the flash heating, the wafer is scattered, and therefore, such heat transmission is not generated whereby the temperature rise of the hot plate is not recognized, too. Accordingly, when the temperature rise of the hot plate immediately after the flash heating is not more than a predetermined value, it is determined that the semiconductor wafer has been broken. COPYRIGHT: (C)2006,JPO&NCIPI
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