| 摘要 |
PROBLEM TO BE SOLVED: To suppress lowering in yield of a via resistor by suppressing stress migration so that no void is formed. SOLUTION: The process for forming a semiconductor device comprises a step for forming a first insulation film on a substrate (S102-S110), a step for forming an opening in the first insulation film (S112), a first deposition step for depositing a conductive material in the opening (S114-S118), a step for forming an oxide film on the surface of the conductive material deposited in the opening (S124), a step for forming a second insulation film (S126-S138), a step for forming a hole in the second insulation film (S140), and a second deposition step for depositing a conductive material in the hole (S142-S146). COPYRIGHT: (C)2006,JPO&NCIPI
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