| 摘要 |
In an etching method, multiple etchings are sequentially performed in a single processing vessel on a laminated film having a plurality of layers formed on a substrate to be processed, without unloading the substrate to be processed from the vessel. Between the etchings, a cleaning processing for removing deposits from the processing vessel by using a plasma of a cleaning gas is performed. The cleaning gas is O<SUB>2 </SUB>containing gas, and preferably, a gaseous mixture of O<SUB>2 </SUB>and N<SUB>2 </SUB>gas. Further, the cleaning processing is performed under conditions of 50~200 mTorr in the processing vessel; 5~15 mL/min of O<SUB>2 </SUB>flow rate; and 100~400 mL/min of N<SUB>2 </SUB>flow rate. The method prevents etching characteristics from being affected due to a memory effect, while offering the advantages of an all-in-one etching.
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