发明名称 Plasma chemical vapor deposition method and plasma chemical vapor deposition device
摘要 A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables ( 19 a to 19 h and 24 a to 24 h) having a standard length and vacuum cables ( 20 a to 20 h and 25 a to 25 h) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.
申请公布号 US2005272261(A1) 申请公布日期 2005.12.08
申请号 US20040518371 申请日期 2004.12.28
申请人 MITSUBISHI HEAVY INDUSTRIES LTD. 发明人 MASHIMA HIROSHI;YAMADA AKIRA;KAWAMURA KEISUKE;TAGASHIRA KENJI;TAKEUCHI YOSHIAKI
分类号 C23C16/509;H01J37/32;H01L21/205;(IPC1-7):H01J7/24;H05B31/26;H01L21/44 主分类号 C23C16/509
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