| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method capable of releasing electrons that are charged in a gate electrode even in the process before a metal wiring layer is formed, during a manufacturing process. SOLUTION: Near a first element region 14 in which a transistor is formed, being enclosed with an STI part 12, a second element region 15 enclosed with the STI part 12 is formed. AN n+ diffusion layer 16 is formed on the second element region 15, and the n+ diffusion layer 16 and a substrate 11 constitute a pn junction diode. An extension part 18a of the gate electrode covers a part of gate insulating film 17b on the second element region 15, and is connected to the n+ diffusion layer 16 on the second element region 15 through an opening 17c provided to the gate insulating film 17b. The extension 18a of the gate electrode 18 is further connected to a metal wiring formed on an upper layer by the contact that penetrates an interlayer insulating film. COPYRIGHT: (C)2006,JPO&NCIPI
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