发明名称 ELECTROLESS PLATING METHOD FOR SILICON SUBSTRATE AND METHOD FOR FORMING METALLIC LAYER ON SILICON SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To simply form an electroless plating film having excellent flatness and uniformity on a silicon substrate at a low cost by using a catalyzing solution having excellent removing capacity for a silicon oxide film. <P>SOLUTION: A silicon substrate is dipped into an aqueous solution containing hydrofluoric acid, ammonium fluoride and catalyst metal for electroless plating to catalyze the surface of the silicon substrate, and thereafter, a metal film is formed on the surface of the silicon substrate by electroless plating. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005336600(A) 申请公布日期 2005.12.08
申请号 JP20040312373 申请日期 2004.10.27
申请人 ALPS ELECTRIC CO LTD 发明人 SEKI HITOSHI
分类号 C23C18/18;C23C18/16;C23C18/32;C23C18/38;C23C18/42;H01L21/288;(IPC1-7):C23C18/18 主分类号 C23C18/18
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