| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To effectively capture heavy metal contamination into a bulk layer, the contamination being caused by ion implantation and by a high temperature heat treatment. <P>SOLUTION: A manufacturing method of SIMOX substrate comprises a process of implanting oxygen ion into a wafer 11; and a process of forming an embedded oxidation layer 12 and forming an SOI layer 13 by rendering the wafer to a first heat treatment in a predetermined gas atmosphere at 1,300 to 1,390°C, the wafer before oxygen ion implantation having oxygen concentration of 9×10<SP>17</SP>to 1.8×10<SP>18</SP>atoms/cm<SP>3</SP>(old ASTM), and the embedded oxidation layer being formed wholly or partially over the entire surface of the wafer. The method includes a second heat treatment process for forming an oxygen deposition nucleus 14b in the wafer, and a third heat treatment process for growing the oxygen deposition nucleus 14b formed in the wafer into an oxygen deposit 14c before the oxygen ion implantation process or between the oxygen ion implantation process and the first heat treatment process. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
