| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a method for controlling the same, in which the performance is not degraded even when a refresh operation or a switching operation of a word line occurs during a burst operation. SOLUTION: The semiconductor storage device, in which the burst operation is performed using a memory core, is provided with: a read/write trigger signal generation circuit 5 for generating a read/write signal request CL-trig from a prescribed timing signal CMD, wrt, write, during the burst operation: and a read/write signal generation circuit 6 for receiving the output signal of the read/write trigger signal generation circuit and for outputting the read/write signal CL after waiting for the end of the immediately preceding core operation and the completion of the subsequent activation of the row side. COPYRIGHT: (C)2006,JPO&NCIPI
|
