MIXED OXIDE SEMICONDUCTOR MEMBRANE AND FORMING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a mixed oxide semiconductor membrane having a responsiveness to a visible radiation. SOLUTION: The membrane forming method of forming such a mixed oxide semiconductor membrane on a base body 20 as has the constitutional component of indium tantalate, comprises the using together of a sputtering ion radiation process of radiating an ion beam toward a target material 11 provided with the first target part 11a consisting of tantalum and with the second target part 11b consisting of indium and of an assisting ion radiation process of radiating an ion beam containing at least oxygen ion toward a base body 20. COPYRIGHT: (C)2006,JPO&NCIPI