Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device

摘要

A method for depositing a metal compound film on the wafer by using a vapor phase deposition apparatus 100 , comprising: forming a thin film on the wafer in an interior of the vapor phase deposition apparatus 100 by introducing a source gas for the metal compound film containing Hf or Zr; unloading the wafer having the metal compound film formed thereon from the interior of the vapor phase deposition apparatus 100 ; introducing a reactive gas in the interior of the vapor phase deposition apparatus 100 to immobilize the unreacted organic compound 180 derived from the source gas remained in the interior of the vapor phase deposition apparatus 100 ; loading another wafer in the interior of the vapor phase deposition apparatus 100 ; and depositing metal compound film on another wafer by further introducing the source gas in the interior of the vapor phase deposition apparatus 100 , in the condition that the unreacted organic compound 180 exists therein as an immobilized form, is presented.