Method and structure for forming relatively dense conductive layers

摘要

A region of high metal density may be placed in metal layers proximate to an area of low metal density below an inductor on an integrated circuit without violating manufacturing design rules for reducing manufacturing defects and without substantially impacting performance of the inductor. These results are achieved by including a transitional region that includes conductive structures electrically isolated from each other between the region of high metal density and the region of low metal density. The transitional region has a structure that allows a negligible amount of current flow to be induced in the structure.