发明名称 |
Method of forming self-aligned contact and method of manufacturing semiconductor memory device by using the same |
摘要 |
In an embodiment a method of forming self-aligned contacts in a semiconductor memory device includes: forming conductive stacks of conductive layers on a semiconductor substrate; forming insulating spacer layers on sidewalls of the conductive stacks; forming an insulating layer; forming a capping insulating layer covering portions of the insulating layer; and forming conductive pads that fill the contact holes to contact the semiconductor substrate. The capping insulating layer has a function of a buffer, so an etched amount of mask layers insulating the conductive layers is minimized, and a probability of a short circuit between capacitor electrodes and the conductive stacks is greatly reduced.
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申请公布号 |
US2005272250(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20050147953 |
申请日期 |
2005.06.07 |
申请人 |
YUN CHEOL-JU;CHUNG TAE-YOUNG;NAM IN-HO |
发明人 |
YUN CHEOL-JU;CHUNG TAE-YOUNG;NAM IN-HO |
分类号 |
H01L21/28;H01L21/44;H01L21/4763;H01L21/48;H01L21/50;H01L21/60;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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