| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit element wherein the decoupling capacitor is arranged to the minimum distance without using interposer structure. <P>SOLUTION: A thin film capacitor 14 is formed in the side opposite to a wiring layer 13 formation side of a silicon substrate 11 where the integrated circuit is formed. The power supply for the wiring layer 13, grounds and the thin film capacitor 14 are connected by a through hole 16. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
