发明名称 METHOD FOR MANUFACTURING SILICON FILM AND METHOD FOR MANUFACTURING SOLAR BATTERY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon film, by which a thick silicon film can be obtained while suppressing the degree of roughness, and to provide a method for manufacturing a polycrystalline silicon solar battery capable of realizing both of a large electric current and high FF at a low cost. <P>SOLUTION: The solar battery is manufactured by dipping a polycrystalline silicon substrate into a solution 24 containing silicon and forming a pn-junction in a silicon film by growing the silicon film on a substrate 28 while decreasing the temperature lowering rate of the solution with time during dipping of the substrate in the solution. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2005336008(A) 申请公布日期 2005.12.08
申请号 JP20040156968 申请日期 2004.05.27
申请人 CANON INC 发明人 MIZUTANI MASAKI;NISHIDA AKIYUKI;NAKAGAWA KATSUMI
分类号 C01B33/02;C30B19/02;C30B19/10;C30B29/06;H01L21/208;H01L31/04;H01L31/18;(IPC1-7):C30B29/06 主分类号 C01B33/02
代理机构 代理人
主权项
地址