发明名称 |
METHOD FOR MANUFACTURING SILICON FILM AND METHOD FOR MANUFACTURING SOLAR BATTERY |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon film, by which a thick silicon film can be obtained while suppressing the degree of roughness, and to provide a method for manufacturing a polycrystalline silicon solar battery capable of realizing both of a large electric current and high FF at a low cost. <P>SOLUTION: The solar battery is manufactured by dipping a polycrystalline silicon substrate into a solution 24 containing silicon and forming a pn-junction in a silicon film by growing the silicon film on a substrate 28 while decreasing the temperature lowering rate of the solution with time during dipping of the substrate in the solution. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
申请公布号 |
JP2005336008(A) |
申请公布日期 |
2005.12.08 |
申请号 |
JP20040156968 |
申请日期 |
2004.05.27 |
申请人 |
CANON INC |
发明人 |
MIZUTANI MASAKI;NISHIDA AKIYUKI;NAKAGAWA KATSUMI |
分类号 |
C01B33/02;C30B19/02;C30B19/10;C30B29/06;H01L21/208;H01L31/04;H01L31/18;(IPC1-7):C30B29/06 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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