| 摘要 |
PROBLEM TO BE SOLVED: To suppress the dislocation of a substrate at the end of a gate electrode in a semiconductor device. SOLUTION: The semiconductor device comprises a plurality of element isolation regions formed on the principal plane of a semiconductor substrate, an element isolation trench which is located between the element isolation regions and filled up with an element isolation insulation film, a gate insulation film and the gate electrode formed in the element formation regions, and a plurality of interconnection layers formed above the gate electrode. The element isolation trench contains a thermal oxide film formed between the semiconductor substrate and the element isolation insulation film. The element isolation film contains many fine pores inside, and is formed more porous than the thermal oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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