| 发明名称 |
SUBSTRATE TREATMENT DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment device in which self-cleaning can more securely be performed. SOLUTION: Self-cleaning in a device forming a high dielectric constant film of Al<SB>2</SB>O<SB>3</SB>, HfO<SB>2</SB>or Ta<SB>2</SB>O<SB>5</SB>is performed by supplying Cl<SB>2</SB>gas into a treatment furnace 202 from a Cl<SB>2</SB>supply line 232f. COPYRIGHT: (C)2006,JPO&NCIPI
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| 申请公布号 |
JP2005340281(A) |
申请公布日期 |
2005.12.08 |
| 申请号 |
JP20040153544 |
申请日期 |
2004.05.24 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
SATO TAKETOSHI;KYODA MASAYUKI;YAMAZAKI HIROHISA |
| 分类号 |
H01L21/31;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/31 |
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