| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor that dispenses with the alignment among a gate electrode, a source electrode, and a drain electrode, and can obtain both of a high on/off ratio and high-speed operation even if finishing dimensions deviate, and to provide a method for manufacturing the field effect transistor. SOLUTION: In the field effect transistor having the gate electrode 1 on the source electrode 2 and the drain electrode 3 via an active layer 4 and an insulating layer 5 and in the field effect transistor having the source and drain electrodes at the front section or the back section of the active layer, and the gate electrode via an insulating layer on the active layer containing the source and drain electrodes, a recessed groove in an inverted trapezoidal shape is provided at a position corresponding to the source and drain electrodes in the front section of the insulating layer, and the gate electrode 1 is formed so that the entire region in the recessed groove is buried. COPYRIGHT: (C)2006,JPO&NCIPI
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