| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal puller capable of efficiently obtaining a semiconductor single crystal with a different specific resistance range and a method of manufacturing the silicon single crystal. SOLUTION: An impurity charging device 23 is installed at the side of the top of a quartz crucible 12. The impurity charging device 23 is composed of a container 24 containing the impurity (dopant) and a lifting and lowering device 25 which inserts or draws out the container into or from the quartz crucible 12. COPYRIGHT: (C)2006,JPO&NCIPI
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