| 摘要 |
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate ( 110, 510, 1010, 1610 ) having a patterned interconnect layer ( 120, 520, 1020, 1620 ) formed thereon; depositing a first dielectric material ( 130, 530, 1030, 1630 ) over the interconnect layer; depositing a first electrode material ( 140, 540, 1040, 1640 ) over the first dielectric material; depositing a second dielectric material ( 150, 550, 1050, 1650 ) over the first electrode material; depositing a second electrode material ( 160, 560, 1060, 1660 ) over the second dielectric material; patterning the second electrode material to form a top electrode ( 211, 611, 1111, 1611 ) of a first capacitor ( 210, 710, 1310, 1615 ); and patterning the first electrode material to form atop electrode ( 221, 721, 1221, 1621 ) of a second capacitor ( 220, 720, 1320, 1625 ), to form an electrode ( 212, 712, 1212, 1612 ) of the first capacitor, and to define a resistor ( 230, 730, 1330 ).
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