发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes: (a) forming an insulating layer having a contact hole on a semiconductor section in which an element is formed; (b) forming an electrode pad on the insulating layer so that a depression or a protrusion remains at a position at which the electrode pad overlaps the contact section; (c) forming a passivation film to have an opening on a first section of the electrode pad and to be positioned on a second section of the electrode pad; (d) forming a barrier layer on the electrode pad; and (e) forming a bump to be larger than the opening in the passivation film and to be partially positioned on the passivation film. The contact section is connected with the second section at a position within a range in which the contact section overlaps the bump while avoiding the first section of the electrode pad.
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申请公布号 |
US2005272243(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20050142439 |
申请日期 |
2005.06.02 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YUZAWA TAKESHI;YUZAWA HIDEKI;TAKANO MICHIYOSHI |
分类号 |
H01L23/52;H01L21/3205;H01L21/44;H01L21/60;H01L21/70;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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