发明名称 |
Nonvolatile flash memory and method of operating the same |
摘要 |
A nonvolatile memory and a method of operating the same are proposed. The nonvolatile memory has single-gate memory cells, wherein a structure of a transistor and a capacitor is embedded in a semiconductor substrate. The transistor comprises a first conducting gate stacked on the surface of a dielectric with doped regions formed at two sides thereof as a source and a drain. The capacitor comprises a doped region, a dielectric stacked thereon, and a second conducting gate. The conducting gates of the capacitor and the transistor are electrically connected together to form a single floating gate of the memory cell. The semiconductor substrate is p-type or n-type. Besides, a back-bias program write-in and related erase and readout operation ways are proposed for the single-gate memory cells.
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申请公布号 |
US2005270850(A1) |
申请公布日期 |
2005.12.08 |
申请号 |
US20040861392 |
申请日期 |
2004.06.07 |
申请人 |
WANG LEE Z;HUANG DANIEL;LIN HSIN C;CHANG ROGET |
发明人 |
WANG LEE Z.;HUANG DANIEL;LIN HSIN C.;CHANG ROGET |
分类号 |
G11C11/34;G11C16/04;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/34 |
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主权项 |
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地址 |
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