| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve a discharge voltage by improving the orientation of cells, and to obtain high converting efficiency by improving power generating effi ciency by light confinement effects. <P>SOLUTION: A plurality of cells in a pin type or nip type structure constituted of amorphous Si or crystalline Si are laminated in multi-stages through a transparent conductive layer 12 on a glass substrate 11, and a metallic layer for reflection is formed through an oxide layer on the cells so that a tandem type solar battery can be manufactured. In this method for manufacturing the solar battery, at the time of forming cells 13 and 14 in the pin type or nip type structure through the transparent conductive layer 12 on the glass substrate 11, the i type a-si power generating film 13b of the cell 13 is manufactured, and then the power generating film 13b is made flat by carrying out Ar or H<SB>2</SB>plasma etching treatment. <P>COPYRIGHT: (C)2003,JPO</p> |
