发明名称 |
Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
摘要 |
A semiconductor light-emitting device includes an n-type region, a p-type region, and light-emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer. |
申请公布号 |
EP1603171(A2) |
申请公布日期 |
2005.12.07 |
申请号 |
EP20050104535 |
申请日期 |
2005.05.27 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY LLC |
发明人 |
EPLER, JOHN;KRAMES, MICHAEL, R.;WIERER, JONATHAN, J., JR. |
分类号 |
H01L33/46;H01S5/183;H01L33/00;H01L33/22 |
主分类号 |
H01L33/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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