| 摘要 |
AlGaInN single-crystal wafer with alleviated cracking and improved utilization rate and cost effectiveness. A hexagonal AlxGayIn1-(x+y)N (0 < x ≤ 1, 0 ≤ y < 1, x + y ≤ 1) single-crystal wafer, characterized in that the wafer has a thickness T (cm) and a principal face with a surface area S (cm<2>), the area S and thickness T satisfying the conditions S ≥ 10 cm<2> and 0.006S ≥ T ≥ 0.002S. <IMAGE>
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