LASER MODULE

摘要

A laser module is designed so that a total relative intensity noise (RIN) in a high frequency range from 10 MHz to 1 GHz (hereinafter, "high-frequency RIN") is equal to or more than -40 dB. In a semiconductor laser element incorporated in the laser module, which includes an active layer having a quantum well structure, a light confinement coefficient per a well layer GAMMA and a thickness of a well layer d (nanometer) satisfy GAMMA /d=1.3x10-3nm-1. As an active-layer for the semiconductor laser element, a decoupled confinement heterostructure (DCH structure) or a separated confinement heterostructure (SCH structure) can be adopted.