发明名称 ELEVATED PORE PHASE-CHANGE MEMORY
摘要 An elevated phase-change memory cell facilitates manufacture of phase-change memories by physically separating the fabrication of the phase-change memory components from the rest of the semiconductor substrate. In one embodiment, a contact in the substrate may be electrically coupled to a cup-shaped conductor filled with an insulator. The conductor couples current up to the elevated pore while the insulator thermally and electrically isolates the pore.
申请公布号 KR100534530(B1) 申请公布日期 2005.12.07
申请号 KR20047002594 申请日期 2004.02.23
申请人 发明人
分类号 H01L27/10;H01L27/105;H01L27/115;(IPC1-7):H01L27/10 主分类号 H01L27/10
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