Method of forming shallow trench isolation layer in semiconductor device,申请号KR19990042213-传众专利搜索

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发明名称	Method of forming shallow trench isolation layer in semiconductor device
摘要
申请公布号	KR100533380(B1)	申请公布日期	2005.12.06
申请号	KR19990042213	申请日期	1999.10.01
申请人		发明人
分类号	H01L21/76;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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