发明名称 High frequency power amplifier module
摘要 The present invention provides a power amplifier module used in a cellular phone or the like. In the power amplifier module, a bias control circuit converts a bias voltage to a current by MOS transistors, whereby a voltage drop is reduced and the value of the bias voltage is lowered. Bias control signals outputted from the bias control circuit are inputted to a high-frequency amplifying unit through low-pass filters. The low-pass filter comprises an inductance, and a condenser. Each of the condensers attenuates an envelope frequency. Each of the inductances suppresses a change in impedance at a carrier frequency of a modulation signal.
申请公布号 US6972627(B2) 申请公布日期 2005.12.06
申请号 US20030368475 申请日期 2003.02.20
申请人 RENESAS TECHNOLOGY CORP. 发明人 OHNISHI MASAMI;AKAMINE HITOSHI
分类号 H04B1/04;H01L23/66;H03F1/30;H03F3/191;H03G3/30;(IPC1-7):H03G3/30 主分类号 H04B1/04
代理机构 代理人
主权项
地址