发明名称 Nonvolatile memory
摘要 There is provided a technology to realize high speed data transfer while compatibility of a card type storage device comprising a nonvolatile memory is ensured. Namely, in the card type storage device comprising the nonvolatile memory, a plurality of data terminals are provided and an interface unit is provided with a circuit for determining levels of data terminals. Some or all of the plurality of data terminals are connected with pull-up resistors for pulling up to a power source voltage. When the determination circuit determines that the data terminals connected with the pull-up resistors are in an open condition, the determination circuit switches a bus width (number of bits) of data.
申请公布号 US6972979(B2) 申请公布日期 2005.12.06
申请号 US20030716504 申请日期 2003.11.20
申请人 RENESAS TECHNOLOGY CORP. 发明人 IIDA TETSUYA;KANAMORI MOTOKI;SHIKATA ATSUSHI;TAMURA TAKAYUKI;KATAYAMA KUNIHIRO
分类号 G06K19/077;G06K19/06;G06K19/07;G11C5/02;G11C7/00;G11C16/04;G11C16/06;(IPC1-7):G11C5/02 主分类号 G06K19/077
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