Chalcogenide random access memory and method of fabricating the same

摘要

A method of fabricating a chalcogenide random access memory (CRAM) is provided. The method is to provide a substrate having a bottom electrode thereon and then form a chalcogenide film and a patterned mask corresponding to the bottom electrode sequentially over the substrate. Thereafter, using the patterned mask, an ion implantation is performed to convert a portion of the chalcogenide film into a modified region while the chalcogenide film underneath the patterned mask is prevented from receiving any dopants and hence is kept as a non-modified region. The modified region has a lower conductivity than the non-modified region. After that, the patterned mask is removed and then a top electrode is formed over the non-modified region. Utilizing the ion implantation as a modifying treatment, the contact area between the chalcogenide film and the bottom electrode is decreased and the operating current of the CRAM is reduced.