发明名称 |
Method for co-fabricating strained and relaxed crystalline and poly-crystalline structures |
摘要 |
One embodiment of the present invention provides a system for co-fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.
|
申请公布号 |
US6972245(B2) |
申请公布日期 |
2005.12.06 |
申请号 |
US20030439748 |
申请日期 |
2003.05.15 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
PETERSON JEFFREY J.;HUNT CHARLES E. |
分类号 |
H01L21/20;H01L21/268;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|