发明名称 Structure and method of making an enhanced surface area capacitor
摘要 As disclosed herein, a capacitor structure and method are provided to enhance plate surface area to provide increased capacitance. The capacitor structure includes a base which includes a surface having an mxn array of upwardly or downwardly extending features, or a combination of upwardly and downwardly extending features, where m and n are each at least two. In addition, a first plate of the capacitor includes a first conductive layer which conforms to the contours of the surface. The capacitor also includes a conformal capacitor dielectric layer placed over the conformal conductive layer. When the capacitor is an electrolytic capacitor, the structure of the first plate and capacitor dielectric layer is contacted by an electrolyte. When the capacitor is a plate capacitor, a second plate including a second conductive layer is placed over the conformal capacitor dielectric layer. In addition, a method is disclosed for fabricating a capacitor having increased capacitance, by greatly increasing the surface area of a conductive plate of the capacitor.
申请公布号 US6972473(B2) 申请公布日期 2005.12.06
申请号 US20030639086 申请日期 2003.08.12
申请人 TESSERA, INC. 发明人 BEROZ MASUD
分类号 H01G9/032;H01G9/042;H01G9/15;H01L21/02;H01L21/334;H01L21/8242;H01L27/108;H01L29/00;H01L29/76;H01L31/119;(IPC1-7):H01L29/00 主分类号 H01G9/032
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