发明名称 |
Memory element having islands |
摘要 |
A memory including a memory element having islands is provided. The memory has address decoding circuitry and an array of memory plugs. The memory plugs include memory element that have island structures of a first material within the bulk of a second material. The island structures are typically nanoparticles. The memory plugs can be placed in a first resistive state at a first write voltage, placed in a second resistive state at a second write voltage, and have its resistive state determined at a read voltage.
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申请公布号 |
US6972985(B2) |
申请公布日期 |
2005.12.06 |
申请号 |
US20040868578 |
申请日期 |
2004.06.15 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;CHEVALLIER CHRISTOPHE J.;SWAB PHILIP F. S.;HSIA STEVE KUO-REN;SANCHEZ, JR. JOHN E.;LONGCOR STEVEN W. |
分类号 |
G11C11/00;G11C11/56;G11C13/02;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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