发明名称 MAGNETIC RANDOM ACCESS MEMORY
摘要 In a magnetic random access memory (MRAM), setting data which determines the supply/cutoff timing, magnitude, and temporal change (current waveform) of a write word/bit line current is registered in a setting circuit. A write current waveform control circuit generates a write word line drive signal, write word line sink signal, write bit line drive signal, and write bit line sink signal on the basis of the setting data. The current waveform of the write word/bit line current is controlled for each chip or memory cell array.
申请公布号 KR100533300(B1) 申请公布日期 2005.12.05
申请号 KR20030030924 申请日期 2003.05.15
申请人 发明人
分类号 G11C11/15;(IPC1-7):G11C11/15 主分类号 G11C11/15
代理机构 代理人
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