| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for efficiently forming a uniform low dielectric constant film without crack in a short period of time. SOLUTION: In the method, mixed liquid containing silica sol and surfactant is supplied from a reservoir tank 15 and is applied to a substrate 1, and surfactant is removed so as to form the low dielectric constant film. Plasma irradiation treatment is performed on mixed liquid applied to the substrate 1 under pressure near atmospheric pressure by plasma irradiation equipment 20. Surfactant is removed and a meso-porous silica layer is formed. The low dielectric constant film is formed on the surface of the substrate 1. In plasma irradiation treatment, it is desirable that raw gas passing discharge space and having oxidizing quality is introduced from a raw gas supply source 23 and is sprayed to the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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