| 发明名称 |
SEMICONDUCTOR RESISTIVE ELEMENT, MANUFACTURING METHOD OF SAME AND SEMICONDUCTOR DEVICE USING SEMICONDUCTOR RESISTIVE ELEMENT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor resistive element (diffused resistor) that temperature coefficient is small and dispersion of resistance values is small. <P>SOLUTION: A p-type diffusion layer 12 is formed by injecting ions onto an n-type semiconductor substrate 15 and an n-type resistive element region 13 is formed by injecting ions onto the surface layer of the layer 12. Wherein, the concentration of surface impurity in the layer 12 is 1.0×10<SP>18</SP>atoms/cm<SP>3</SP>or more and 8.0×10<SP>18</SP>atoms/cm<SP>3</SP>or less. In addition, the concentration of surface impurity in the region 13 is 1.0×10<SP>19</SP>atoms/cm<SP>3</SP>or more and 5.0×10<SP>19</SP>atoms/cm<SP>3</SP>or less. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2005333093(A) |
申请公布日期 |
2005.12.02 |
| 申请号 |
JP20040152607 |
申请日期 |
2004.05.21 |
| 申请人 |
OMRON CORP |
发明人 |
KURATANI NAOTO;HARUYAMA TAKAYUKI;OKAMOTO KEISUKE;YANAZAKI TAKABUMI;WADA SHINICHI |
| 分类号 |
G01L9/00;G01P15/12;H01L21/02;H01L21/329;H01L21/822;H01L27/04;H01L27/08;H01L29/84;H01L29/8605 |
主分类号 |
G01L9/00 |
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