GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE, ITS PRODUCING METHOD AND GROUP III NITRIDE SEMICONDUCTOR DEVICE, ITS PRODUCING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device almost free from the dispersion of device characteristics in a production lot, a method for producing the same, a group III nitride semiconductor crystal substrate suitable for producing the semiconductor device, and a method for producing the same.

SOLUTION: The method for producing the group III nitride semiconductor crystal substrate includes a process for growing the group III nitride semiconducting crystal substrate 12 of hexagonal system on a ground substrate 11 and a process for separating the group III nitride semiconducting crystal substrate 12 from the ground substrate 11, and is characterized in that the group III nitride semiconducting crystal substrate 12 is grown in the c-axis direction and an atomic layer comprising a group III element is grown at first.

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