| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, especially using a TFT having an LDD region, represented by a TFT manufacturable in a simplified process, and a liquid crystal display and an EL display, and their manufacturing methods. SOLUTION: The semiconductor device comprises a channel region, a semiconductor layer composed of a pair of impurity regions and a pair of low-concentration impurity layers, and a gate electrode layer of a monolayer structure or laminated layer structure having film thickness differences which is contacted with the semiconductor layer via a gate insulation film. The gate electrode layer having film thickness differences is easily formed by the liquid-drop discharge method, the advantage of which is utilized to its maximum. COPYRIGHT: (C)2006,JPO&NCIPI |
