| 摘要 |
PROBLEM TO BE SOLVED: To enhance the reliability, response speed, and write/read characteristics of a transistor. SOLUTION: The semiconductor device of the invention comprises a silicon substrate 10 a surface of which has a step 11 and a terrace 12, a gate insulator film 15 which is formed on the silicon substrate 10 and includes a crystalline oxide film, and a gate electrode 16 which is formed on the gate insulator film 15. The silicon substrate 10 has a source region 20 and a drain region 21, between which there is a portion of the silicon substrate 10 that is in contact with the gate insulator film 15. The gate insulator film 15 and the portion of the silicon substrate 10 that is in contact with the gate insulator film 15 have a crystal-crystal structure. COPYRIGHT: (C)2006,JPO&NCIPI
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