| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor layer of group III-V compound semiconductor which contains a gallium element, indium element, arsenic element and nitrogen element, and shows a good optical property. <P>SOLUTION: A semiconductor layer 15 consisting of the group III-V compound semiconductor containing a gallium element, indium element, arsenic element and nitrogen element is formed on a GaAs substrate 11. Thereafter, the semiconductor layer 15 is heat-treated at temperature T<SB>Ann</SB>in an atmosphere including active hydrogen 23. After the heat treatment of the semiconductor layer 15 is completed, a heat reduction is performed from heat treatment temperature T<SB>Ann</SB>in an atmosphere excluding any active hydrogen. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
