| 摘要 |
PROBLEM TO BE SOLVED: To evade the reduction of an operation rate caused by the down time of a device and the increase of maintenance cost caused by the exchange of parts at the time of removing a metal film remaining in a reaction chamber and by-products produced by the treatment therefor. SOLUTION: In a reaction chamber 10 where film deposition or working treatment of a metal film is performed, an oxidizing gas is introduced from an oxidizing gas introduction part 20, and a metal film remaining in the reaction chamber 10 by the treatment or by-products produced by the treatment are oxidized to form the oxides thereof. Successively, an organic acid gas is introduced from an organic acid gas introduction part 30, and is reacted with the oxides, so as to cause etching. By the automatic chemical treatment, the metal film and the by-products can be removed. COPYRIGHT: (C)2006,JPO&NCIPI
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