POWER SEMICONDUCTOR SWITCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a power semiconductor switching device provided with thin capacitors and thin MOSFETs. SOLUTION: The power semiconductor switching device has a GCT provided with an anode, a cathode and a gate. A forward bias driver is provided for turning on the GCT and a reverse bias driver is provided for turning off the GCT. The reverse bias driver has a plurality of low profile capacitors and low profile MOSFETs. A charger is provided for charging the thin capacitors within predetermined short time tCmin after turning off the power semiconductor switching device. COPYRIGHT: (C)2006,JPO&NCIPI