PHOTONIC INTEGRATED DEVICE USING REVERSE-MESA STRUCTURE AND METHOD FOR FABRICATING SAME

摘要

PROBLEM TO BE SOLVED: To provide a photonic integrated device using a reverse-mesa structure and a method for fabricating the same, which is capable of simplifying a fabricating process for the photonic integrated device while reducing serial resistance of the device. SOLUTION: This photonic integrated device using a reverse-mesa structure comprises: a first conductive substrate 21 on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated; a first conductive clad layer 22 and an active layer 23 sequentially formed on the first conductive substrate 21 in the form of a mesa structure; a second conductive clad layer 24 formed on the active layer in the form of a reverse-mesa structure; an ohmic contact layer 25 formed on the second clad layer 24 in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer; a current shielding layer 28 filled in a sidewall having a mesa and reverse-mesa structure; and at least one window area formed between the above integrated elements. COPYRIGHT: (C)2006,JPO&NCIPI