| 摘要 |
PROBLEM TO BE SOLVED: To obtain a MIS transistor which has less incidence of an electrical short circuit between its gate electrode and its source/drain electrode. SOLUTION: A sidewall 15 has a double structure. A buffer layer 13 is made of silicon nitride oxide. A silicon nitride layer 14 is formed on the buffer layer 13. A silicide film 10 is formed by using the sidewall 15 as a mask. COPYRIGHT: (C)2006,JPO&NCIPI
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