| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer of which resistivity in the depth direction is uniform from the surface to a bulk layer. SOLUTION: A p-type silicon wafer doped with boron is heated at a temperature range from 1,100°C to 1,300°C in an argon gas atmosphere for an hour. Waiting time for leaving a wafer boat in a transfer room after the heat-treated silicon wafer is taken out of the transfer room until a next silicon wafer to be heat-treated is put into the transfer room is set at two hours or less. This provides a p-type silicon wafer of which concentration of n-type impurities at the surface is 1×10<SP>14</SP>atoms/cm<SP>3</SP>or less and results in obtaining a p-type silicon wafer having a uniform resistivity from the surface to a bulk layer. COPYRIGHT: (C)2006,JPO&NCIPI
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